Category:Windows multimedia software
Category:Windows-only freeware
Category:Windows-only freeware guitar software
Category:Windows-only softwareThis invention relates to a method of etching the surface of a semiconductor wafer, and more particularly to a method of producing a semiconductor device by etching the surface of the semiconductor wafer while retaining its crystalline structure.
An etching method for the above mentioned purpose has been proposed wherein the substrate is dipped into a solution of an etching agent containing halogen ions (hereinafter called "plasma etching") and the thus treated substrate is rinsed with water to remove the etching agent.
In the conventional plasma etching, the substrate is usually immersed in a bath containing an etching solution, and a radio frequency plasma is generated between the substrate and the solution. For example, a radio frequency power of 13.56 MHz is fed between the substrate and the etching solution through an electrode, the arrangement of which is shown in FIG. 1.
In the above arrangement, the direct current power supply voltage of the radio frequency power is applied to the substrate and the electrode through an ohmic contact layer. In this arrangement, the radio frequency current is distributed through the surface of the substrate, so that the etching solution is uniformly etched from the substrate surface to provide a uniform etching depth.
However, in the conventional plasma etching as described above, the etching depth of the substrate is measured by observing the change in the transmission or reflection of the light beam which is caused by the presence of grooves formed in the surface of the substrate by the etching.
In the above case, it is required to employ means for generating light beams. In general, the intensity of the light beam is low when the transmitting or reflecting type light-receiving element is used. In this case, the observation must be carried out with the very weak light beam having a very short irradiation time. This method is very poor in operability and accuracy and cannot be regarded as a reliable test.
In the case of a laser beam, on the other hand, the characteristic of the laser beam is relatively uniform and a high light-receiving sensitivity is obtainable. However, the diameter of the spot of the laser beam is large (100 microns or more). This requires a relatively long time to carry out the etching. The large spot diameter also causes a difficulty in the control of the etching depth. Further, 01e38acffe
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